(China (Mainland))
Product Summary
The SI2333DS-T1-E3 is a P-Channel 12-V (D-S) MOSFET. It is featured with halogen-free According to IEC 61249-2-21 available, and trenchFET power MOSFET. It has a wide application in load switch and PA switch.
Parametrics
Absolute maximum ratings:(1)Drain-Source Voltage, VDS: -12V; (2)Gate-Source Voltage, VGS: ±8V; (3)Continuous Drain Current (TJ = 150 ℃), TA = 25 ℃, ID: -5.3A(at 5s), -4.1A(at the condition of Steady State); (4)Continuous Drain Current (TJ = 150 ℃), TA = 70 ℃, ID: -4.2A(at 5s), -3.3A(at the condition of Steady State); (5)Pulsed Drain Current, IDM: -20A; (6)Continuous Source Current (Diode Conduction), IS: -1.0(at 5s), -0.6(at the condition of Steady State); (7)Maximum Power Dissipation, TA = 25 ℃, PD:1.25W(at 5s), 0.75W(at the condition of Steady State); (8)Maximum Power Dissipation, TA = 70 ℃, PD: 0.8W(at 5s), 0.48(at the condition of Steady State); (9)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150℃.
Features
Features:(1)Halogen-free According to IEC 61249-2-21Available; (2)TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
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 SI2333DS-T1-E3 |
Vishay/Siliconix |
MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V |
Data Sheet |
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