(China (Mainland))
Product Summary
The SGF80N60UFTU is a Insulated Gate Bipolar Transistor(IGBT) belongs to UF series. It provides low conduction and switching losses. The SGF80N60UFTU is designed for the applications such as motor control and general inverters where High Speed Switching is required.
Parametrics
Absolute maximum ratings:(1)Collector-Emitter Voltage, VCES: 600V; (2)Gate-Emitter Voltage, VGES: ±20V; (3)Collector Current, TC = 25℃, IC: 80A; (4)Collector Current, TC = 100℃, IC: 40A; (5)Pulsed Collector Current, ICM: 220A; (6)Maximum Power Dissipation, TC =25℃, PD: 110W; (7)Maximum Power Dissipation, TC =100℃, PD: 45W; (8)Operating Junction Temperature, TJ: -55 to +150℃; (9)Storage Temperature Range, Tstg: -55 to +150℃; (10)Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds, TL: 300℃.
Features
Features:(1)High Speed Switching; (2)Low Saturation Voltage : VCE(sat) = 2.1V, IC = 40A; (3)High Input Impedance.
Diagrams
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 SGF80N60UFTU |
Fairchild Semiconductor |
IGBT Transistors Discrete Hi-P IGBT |
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SGF80N60UF |
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SGF80N60UFD |
Other |
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Data Sheet |
Negotiable |
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SGF80N60UFTU |
Fairchild Semiconductor |
IGBT Transistors Discrete Hi-P IGBT |
Data Sheet |
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